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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX84 BUX85 DESCRIPTION *With TO-220C package *High switching speed APPLICATIONS *Suitable for switching power supplies in TV sets PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUX84 Collector-base voltage BUX85 BUX84 VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage BUX85 Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 10 2 3 0.75 1 40 150 -65~150 V A A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting flange MAX 2.5 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUX84 IC=100mA ; IB=0;L=25mH BUX85 IC=0.3A ;IB=0.03A IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCES=800V; VBE=0 Tj=125 VCES=1000V; VBE=0 Tj=125 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V IC=0.2A ;VCE=10V;f=1.0MHz 20 15 450 CONDITIONS MIN 400 BUX84 BUX85 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUX84 1.5 3.0 1.1 1.0 1.5 0.2 1.5 1.0 100 V V V ICES Collector cut-off current BUX85 mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.2 2 0.4 0.5 3.5 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX84 BUX85 Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 |
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